Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)
877
Manufacturer
Package
Operating Temperature
Configuration
FET Type
Total Gate Charge
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
Continuous Drain Current
Gate - Source Threshold Voltage
Power Dissipation
Encapsulated Type
Drain - Source Breakdown Voltage
Input Capacitance
Results:
877
Images
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Pricing
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Quantity
|
Availability
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Mfr.Part #
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Manufacturer
|
Description
|
RoHS
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LCSC Part#
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Package
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Packaging
|
FET Type
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Gate - Source Threshold Voltage
|
Power Dissipation
|
Continuous Drain Current
|
RDS(on)
|
Drain - Source Breakdown Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Operating Temperature
|
Configuration
|
Encapsulated Type
|
Output Capacitance
|
|---|
Images
|
Pricing
|
Quantity
|
Availability
|
Mfr.Part #
|
Manufacturer
|
Description
|
RoHS
|
LCSC Part#
|
Package
|
Packaging
|
FET Type
|
Gate - Source Threshold Voltage
|
Power Dissipation
|
Continuous Drain Current
|
RDS(on)
|
Drain - Source Breakdown Voltage
|
Reverse Transfer Capacitance
|
Input Capacitance
|
Total Gate Charge
|
Operating Temperature
|
Configuration
|
Encapsulated Type
|
Output Capacitance
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| | Min: 1 Mult: 1 |
1000
(1000+0+0)In Stock | C3M0350120J | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5241022 | TO-263-7 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
696
(470+226+0)In Stock  | IMZA65R027M1H | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536297 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
372
(0+372+0)In Stock | NTH4L040N120M3S | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673849 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
370
(370+0+0)In Stock | S1M075120H2 | Asian Brands | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363608 | TO-247-4L | Tube-packed | 1 N-channel | 2.8V | 224W | 44A | 60mΩ@18V | 1200V | 3.8pF | 1037pF | 40nC | -55℃~+175℃ | - | - | - | ||
| | Min: 1 Mult: 1 |
350
(0+350+0)In Stock | IMZA120R020M1HXKSA1 | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7207676 | TO-247-4 | Tube-packed | 1 N-channel | 4.2V | 375W | 98A | 19mΩ@18V | 1200V | - | 3460pF | 27.1nC | -55℃~+175℃ | - | - | 159pF | |||
| | Min: 1 Mult: 1 |
311
(50+261+0)In Stock | SP25N120CTK | Asian Brands | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22466831 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
298
(150+148+0)In Stock | SC160N120T8L | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C36493854 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
291
(0+291+0)In Stock | IMW65R039M1HXKSA1 | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3278949 | TO-247-3-41 | Tube-packed | 1 N-channel | - | 176W | 46A | - | 650V | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
284
(0+284+0)In Stock | NVH4L040N120M3S | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673852 | TO-247-4L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
283
(283+0+0)In Stock | SCT3160KLGC11 | TO-247AC-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C191060 | TO-247AC-3 | Tube-packed | 1 N-channel | - | 103W | 17A | - | 1200V | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
279
(279+0+0)In Stock | C3M0016120K | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5713523 | TO-247-4 | Tube-packed | 1 N-channel | - | 556W | 115A | - | 1200V | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
256
(256+0+0)In Stock | CI40N65SM(TOKMAS) | Asian Brands | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C18214413 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| | Min: 1 Mult: 1 |
250
(0+250+0)In Stock | IMZ120R090M1H | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C536293 | TO-247-4 | Tube-packed | 1 N-channel | 5.7V | 115W | 26A | 90mΩ@18V | 1200V | - | 707pF | 21nC | -55℃~+175℃ | - | - | 39pF | |||
| | Min: 1 Mult: 1 |
247
(7+240+0)In Stock | S1M075120H1 | Asian Brands | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363607 | TO-247-4L | Tube-packed | 1 N-channel | 2.8V | 214W | 38A | 70mΩ@18V | 1200V | 3.9pF | 920pF | 40nC | -55℃~+175℃ | - | - | - | ||
| | Min: 1 Mult: 1 |
240
(240+0+0)In Stock | IMZA65R072M1HXKSA1 | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3029556 | TO-247-4 | Tube-packed | 1 N-channel | - | 96W | 28A | - | 650V | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
235
(235+0+0)In Stock | CI60N120SM4 | Asian Brands | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C2980704 | TO-247-4L | Tube-packed | 1 N-channel | 2.5V | 330W | 60A | 45mΩ@20V | 1200V | 29pF | 3550pF | 160nC | -55℃~+175℃ | - | Single Tube | - | ||
| | Min: 1 Mult: 1 |
230
(230+0+0)In Stock | CI90N120SM | Asian Brands | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5364636 | TO-247-3 | Tube-packed | 1 N-channel | 2.5V | 463W | 90A | 27mΩ@20V | 1200V | 42.8pF | 4700pF | 164nC | -55℃~+150℃ | - | Single Tube | 231pF | ||
| | Min: 1 Mult: 1 |
224
(224+0+0)In Stock | S1M075120D1 | Asian Brands | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363609 | TO-247-3L | Tube-packed | 1 N-channel | 2.8V | 214W | 38A | 75mΩ@18V | 1200V | 3.9pF | 920pF | 40nC | -55℃~+175℃ | - | - | - | ||
| | Min: 1 Mult: 1
Full Reel: 1000
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216
(216+0+0)In Stock | IMBF170R1K0M1XTMA1 | TO-263-7-13 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C3279264 | TO-263-7-13 | Tape & Reel (TR) | 1 N-channel | 4.5V | 68W | 5.2A | 809mΩ@15V | 1700V | 0.7pF | 275pF | 5nC | -55℃~+175℃ | - | Single Tube | - | |||
| | Min: 1 Mult: 1 |
200
(0+200+0)In Stock | GC3M0065090D | Asian Brands | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435034 | TO247-3 | Tube-packed | 1 N-channel | 2.1V | 125W | 36A | 65mΩ@15V | 900V | 5pF | 760pF | 71nC | -55℃~+150℃ | - | Single Tube | 66pF | ||
| | Min: 1 Mult: 1 |
178
(1+177+0)In Stock | S1M014120H | Asian Brands | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363603 | TO-247-4L | Tube-packed | 1 N-channel | 2.8V | 625W | 152A | 14mΩ@18V | 1200V | 7.5pF | 5469pF | 230nC | -55℃~+175℃ | - | Single Tube | 235pF | ||
| | Min: 1 Mult: 1 |
177
(0+177+0)In Stock | NTHL1000N170M1 | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C19673851 | TO-247-3L | Tube-packed | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
169
(101+68+0)In Stock | GC2M0080120D | Asian Brands | TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C7435046 | TO247-3 | Tube-packed | 1 N-channel | 2.9V | 192W | 36A | 80mΩ@20V | 1200V | 7.5pF | 1130pF | 71nC | -55℃~+150℃ | - | - | - | ||
| | Min: 1 Mult: 1 |
165
(165+0+0)In Stock | C3M0040120K | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C5588747 | TO-247-4L | Tube-packed | 1 N-channel | - | 326W | 66A | - | 1200V | - | - | - | - | - | - | - | |||
| | Min: 1 Mult: 1 |
162
(0+162+0)In Stock | S1M040120D | Asian Brands | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS | C22363606 | TO-247-3L | Tube-packed | 1 N-channel | 2.8V | 326W | 73A | 32mΩ@18V | 1200V | 10pF | 2159pF | 76nC | -55℃~+175℃ | - | - | - |